SI3464DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3464DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

TrenchFET technology

Operates from -55°C to 150°C

Drain-to-Source Voltage up to 20V

Gate-to-Source Voltage up to ±8V

On-Resistance as low as 24mΩ

Continuous Drain Current up to 8A

Input Capacitance up to 1065pF

Power Dissipation up to 3.6W

Product Advantages

Efficient power switching

Compact surface-mount package

Wide operating temperature range

Low on-resistance for low power loss

Key Technical Parameters

Drain-to-Source Voltage: 20V

Gate-to-Source Voltage: ±8V

On-Resistance: 24mΩ max

Continuous Drain Current: 8A

Input Capacitance: 1065pF max

Power Dissipation: 3.6W max

Quality and Safety Features

RoHS3 compliant

Qualified to automotive standards

Compatibility

SOT-23-6 Thin, TSOT-23-6 package

Tape and Reel packaging

Application Areas

Power management

Motor control

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

Efficient power switching performance

Wide operating temperature range

Compact surface-mount package

Low on-resistance for high efficiency

Compliance with quality and safety standards