SI3460DV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3460DV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI3460DV-T1-E3 is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single.

Product Features and Performance

ROHS3 Compliant

6-TSOP package

TrenchFET series

Tape & Reel (TR) package

Operating temperature range: -55°C to 150°C

Drain to Source Voltage (Vdss): 20V

Maximum Gate-to-Source Voltage (Vgs): ±8V

On-State Resistance (Rds(on)): 27mΩ @ 5.1A, 4.5V

N-Channel MOSFET technology

Threshold Voltage (Vgs(th)): 450mV @ 1mA (Min)

Drive Voltage: 1.8V (Max Rds(on)), 4.5V (Min Rds(on))

Gate Charge (Qg): 20nC @ 4.5V (Max)

Continuous Drain Current (Id): 5.1A @ 25°C

Product Advantages

Low on-state resistance for efficient power delivery

Wide operating temperature range

Compact surface mount package

Suitable for various power management and control applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-to-Source Voltage (Vgs): ±8V

On-State Resistance (Rds(on)): 27mΩ @ 5.1A, 4.5V

Threshold Voltage (Vgs(th)): 450mV @ 1mA (Min)

Continuous Drain Current (Id): 5.1A @ 25°C

Quality and Safety Features

ROHS3 Compliant

Compatibility

The SI3460DV-T1-E3 is compatible with various power management and control applications.

Application Areas

Power management

Motor control

Switching power supplies

General-purpose power switching

Product Lifecycle

The SI3460DV-T1-E3 is an active product and replacements or upgrades may be available.

Key Reasons to Choose This Product

Low on-state resistance for efficient power delivery

Wide operating temperature range for versatile applications

Compact surface mount package for space-constrained designs

Suitable for various power management and control applications