SI3460DDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3460DDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI3460DDV-T1-GE3 is a N-Channel TrenchFET MOSFET transistor from Vishay/Siliconix.

Product Features and Performance

20V Drain-to-Source Voltage (Vdss)

±8V Gate-to-Source Voltage (Vgs)

28mOhm Maximum On-Resistance (Rds(on)) at 5.1A, 4.5V

9A Continuous Drain Current (Id) at 25°C

666pF Maximum Input Capacitance (Ciss) at 10V

7W Power Dissipation at 25°C

-55°C to 150°C Operating Temperature

Product Advantages

Efficient power switching performance

Low on-resistance for low power loss

Compact SOT-23-6 surface mount package

Key Technical Parameters

MOSFET Technology

N-Channel Configuration

1V Maximum Gate Threshold Voltage (Vgs(th)) at 250A

8V to 4.5V Drive Voltage Range

18nC Maximum Gate Charge (Qg) at 8V

Quality and Safety Features

RoHS3 Compliant

Tape and Reel Packaging

Compatibility

This device is compatible with a wide range of electronic circuits and systems that require efficient power switching.

Application Areas

Power supplies

DC-DC converters

Motor drives

Switching regulators

General purpose power switching applications

Product Lifecycle

The SI3460DDV-T1-GE3 is an actively supported product from Vishay/Siliconix. There are no known plans for discontinuation, and replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent power switching performance with low on-resistance

Compact and efficient surface mount package

Wide operating temperature range

RoHS3 compliance for environmental considerations

Availability in standard tape and reel packaging for easy integration