SI3460DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3460DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

6-TSOP Package

SOT-23-6 Thin, TSOT-23-6 Package

Tape & Reel (TR) Packaging

Operating Temperature: -55°C to 150°C

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 27mΩ @ 5.1A, 4.5V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id): 5.1A @ 25°C

Maximum Power Dissipation: 1.1W @ 25°C

N-Channel FET Type

Gate Threshold Voltage (Vgs(th)): 450mV @ 1mA

Drive Voltage Range: 1.8V to 4.5V

Gate Charge (Qg): 20nC @ 4.5V

Surface Mount Mounting

Product Advantages

High performance and efficiency

Compact and space-saving design

Wide operating temperature range

Reliable and robust construction

Key Technical Parameters

Drain to Source Voltage (Vdss)

Maximum Gate-Source Voltage (Vgs)

On-Resistance (Rds(on))

Continuous Drain Current (Id)

Maximum Power Dissipation

Quality and Safety Features

RoHS3 Compliant

Reliable performance within specified temperature range

Compatibility

Compatible with a wide range of electronic systems and applications

Application Areas

Suitable for use in various power management, control, and switching applications

Product Lifecycle

Current product, no discontinuation information available

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High performance and efficiency

Compact and space-saving design

Wide operating temperature range

Reliable and robust construction

RoHS3 compliance for environmental responsibility