SI3460BDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3460BDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI3460BDV-T1-E3 is a discrete N-Channel MOSFET transistor in a SOT-23-6 surface mount package.

Product Features and Performance

N-Channel MOSFET design

20V drain-source voltage (Vdss)

8A continuous drain current (Id) at 25°C

27mΩ maximum on-resistance (Rds(on)) at 5.1A, 4.5V

860pF maximum input capacitance (Ciss) at 10V

2W maximum power dissipation at 25°C (Ta), 3.5W at case temperature (Tc)

Operating temperature range of -55°C to 150°C

Product Advantages

Low on-resistance for improved efficiency

Small surface mount package for space-constrained designs

Wide operating temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 27mΩ @ 5.1A, 4.5V

Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 860pF @ 10V

Power Dissipation: 2W (Ta), 3.5W (Tc)

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and applications that require a high-performance, low on-resistance N-Channel transistor.

Application Areas

Power management circuits

Motor control

Switching power supplies

Automotive electronics

Industrial automation

Consumer electronics

Product Lifecycle

The SI3460BDV-T1-E3 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Low on-resistance for improved efficiency

Small surface mount package for space-constrained designs

Wide operating temperature range for rugged applications

RoHS3 compliance and AEC-Q101 qualification for reliable performance

Compatibility with a wide range of electronic circuits and applications