Manufacturer Part Number
SI3459BDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI3459BDV-T1-GE3 is a P-channel MOSFET transistor from the Vishay TrenchFET series, designed for a wide range of power management and switching applications.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
216mOhm Maximum On-Resistance (Rds(on)) @ 2.2A, 10V
9A Continuous Drain Current (Id) @ 25°C
350pF Maximum Input Capacitance (Ciss) @ 30V
2W Maximum Power Dissipation (Ta), 3.3W (Tc)
Operates in -55°C to 150°C Temperature Range
Low Gate Charge (Qg) of 12nC @ 10V
Product Advantages
Efficient power switching and management
Low on-resistance for low conduction losses
Wide operating temperature range
Compact SOT-23-6 package
Key Technical Parameters
P-Channel MOSFET
Vdss: 60V
Vgs(max): ±20V
Rds(on) (max): 216mOhm @ 2.2A, 10V
Id (continuous): 2.9A @ 25°C
Ciss (max): 350pF @ 30V
Power Dissipation (max): 2W (Ta), 3.3W (Tc)
Quality and Safety Features
RoHS3 compliant
JEDEC standard TSOT-23-6 package
Compatibility
This MOSFET is compatible with a wide range of power management and switching applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Power amplifiers
Battery chargers
Product Lifecycle
The SI3459BDV-T1-GE3 is an active and available product from Vishay. There are no indications of it being discontinued or replaced at this time.
Key Reasons to Choose this Product
Efficient power switching and management with low on-resistance
Wide operating temperature range of -55°C to 150°C
Compact and industry-standard SOT-23-6 package
RoHS3 compliance for environmentally-friendly applications
Proven reliability and performance from the Vishay TrenchFET series