Manufacturer Part Number
SI3458BDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
1A Continuous Drain Current
100mΩ On-Resistance
350pF Input Capacitance
11nC Gate Charge
-55°C to 150°C Operating Temperature
Surface Mount Packaging
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Suitable for a wide range of operating temperatures
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vds): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100mΩ @ 3.2A, 10V
Drain Current (Id): 4.1A (Tc)
Input Capacitance (Ciss): 350pF @ 30V
Power Dissipation: 2W (Ta), 3.3W (Tc)
Quality and Safety Features
ROHS3 Compliant
Suitable for Tape and Reel packaging
Compatibility
Suitable for a wide range of electronic applications requiring high-performance N-Channel MOSFETs
Application Areas
Power conversion and management
Motor control
Switching circuits
Amplifier circuits
Product Lifecycle
Currently available
No discontinuation or replacement planned
Key Reasons to Choose This Product
High power handling and efficiency due to low on-resistance
Wide operating temperature range
Compact surface mount packaging
RoHS compliance for environmental safety
Proven reliability and performance of Vishay / Siliconix products