Manufacturer Part Number
SI3459BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
60V Drain-Source Voltage
216mΩ On-Resistance
9A Continuous Drain Current
350pF Input Capacitance
12nC Gate Charge
-55°C to 150°C Operating Temperature
Product Advantages
Low On-Resistance
High Drain Current Capability
Suitable for Switching and Amplifier Applications
Key Technical Parameters
Drain-Source Voltage: 60V
Gate-Source Voltage: ±20V
On-Resistance: 216mΩ
Drain Current: 2.9A
Input Capacitance: 350pF
Gate Charge: 12nC
Quality and Safety Features
RoHS3 Compliant
Suitable for Tape & Reel Packaging
Compatibility
SOT-23-6 Thin, TSOT-23-6 Package
Application Areas
Switching Circuits
Power Amplifiers
Power Supplies
Motor Control
Product Lifecycle
Current Product
Replacement and Upgrade Options Available
Key Reasons to Choose
Low On-Resistance for Efficient Power Switching
High Drain Current Capacity for Demanding Applications
Wide Operating Temperature Range
RoHS Compliance for Environmental Compatibility