SI3473CDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3473CDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistor - FET, MOSFET - Single

Product Features and Performance

P-Channel MOSFET

Trench Technology

Low On-Resistance

High Current Handling Capability

Low Gate Charge

Product Advantages

Efficient Power Conversion

Compact Design

Reliable Operation

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Vgs (Max): ±8 V

Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.1 A, 4.5 V

Current Continuous Drain (Id) @ 25°C: 8 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V

Power Dissipation (Max): 4.2 W (Tc)

Vgs(th) (Max) @ Id: 1 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4.5 V

Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

SOT-23-6 Thin, TSOT-23-6 Package

Application Areas

Power Management

Switching Circuits

Power Supplies

Motor Controls

Product Lifecycle

Current product

Replacements and upgrades available

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

Compact design for space-constrained applications

Reliable operation across wide temperature range (-55°C to 150°C)

High current handling capability for demanding applications

Low gate charge for efficient switching