SI3483CDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3483CDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor Field Effect Transistor (FET), Metal-Oxide-Semiconductor FET (MOSFET)

Product Features and Performance

ROHS3 Compliant

6-TSOP Package

SOT-23-6 Thin, TSOT-23-6 Package

TrenchFET Series

Tape & Reel Packaging

Operating Temperature: -55°C to 150°C (TJ)

Drain to Source Voltage (Vdss): 30V

Maximum Gate-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 34mΩ @ 6.1A, 10V

Continuous Drain Current (ID): 8A @ 25°C (Tc)

Input Capacitance (Ciss): 1000pF @ 15V

Power Dissipation: 2W (Ta), 4.2W (Tc)

P-Channel FET Type

Threshold Voltage (Vgs(th)): 3V @ 250μA

Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))

Gate Charge (Qg): 33nC @ 10V

Product Advantages

Low on-state resistance for improved efficiency

High power handling capability

Wide operating temperature range

Key Technical Parameters

MOSFET Technology

30V Drain-Source Voltage

±20V Gate-Source Voltage

34mΩ On-State Resistance

8A Continuous Drain Current

1000pF Input Capacitance

2W/4.2W Power Dissipation

Quality and Safety Features

ROHS3 Compliant

Compatibility

Compatible with a wide range of electronic applications that require a P-Channel MOSFET

Application Areas

Suitable for use in various power management, switching, and control applications

Product Lifecycle

Currently available, no information on discontinuation or replacements

Key Reasons to Choose This Product

Low on-state resistance for improved efficiency

High power handling capability

Wide operating temperature range

Compact 6-TSOP package

Tape and reel packaging for automated assembly