SI3493BDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3493BDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

RoHS3 Compliant

Surface Mount Packaging

TrenchFET Series

P-Channel MOSFET

Wide Operating Temperature Range (-55°C to 150°C)

High Drain-Source Voltage (20V)

Low On-Resistance (27.5mΩ)

High Continuous Drain Current (8A)

Low Input Capacitance (1805pF)

High Power Dissipation (2.97W)

Product Advantages

Efficient power management

Reliable high-temperature operation

Compact surface mount design

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 27.5mΩ

Continuous Drain Current (Id): 8A

Input Capacitance (Ciss): 1805pF

Power Dissipation (Pd): 2.97W

Threshold Voltage (Vgs(th)): 900mV

Gate Charge (Qg): 43.5nC

Quality and Safety Features

RoHS3 Compliant

Reliable operation in high-temperature environments

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power management

Motor control

Switching applications

Industrial electronics

Product Lifecycle

Actively available

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Efficient power handling capabilities

Reliable high-temperature performance

Compact surface mount package

Compliance with RoHS regulations

Compatibility with a wide range of applications