Manufacturer Part Number
SI3493BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI3493BDV-T1-E3 is a P-Channel MOSFET transistor from Vishay/Siliconix, designed for a variety of power management and switching applications.
Product Features and Performance
Trench MOSFET technology
RoHS-compliant
Supports operating temperatures from -55°C to 150°C
Low on-resistance (27.5 mΩ max at 7A, 4.5V)
High current capability (8A continuous drain current at 25°C)
Low input capacitance (1805 pF max at 10V)
Fast switching speed
Product Advantages
Excellent power efficiency due to low on-resistance
Compact and space-saving SOT-23-6 package
Suitable for high-temperature environments
Easy to drive with wide gate voltage range (±8V max)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±8V max
Power Dissipation (max): 2.08W (Ta), 2.97W (Tc)
Gate Charge (Qg): 43.5 nC max at 5V
Quality and Safety Features
RoHS3 compliant
Manufactured using robust and reliable Trench MOSFET technology
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Lighting control
Battery charging and management
General power conversion and switching
Product Lifecycle
Currently in production
Replacement or upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving package
Wide operating temperature range
Easy to drive with simple gate voltage requirements
Reliable and robust Trench MOSFET technology
Suitable for a variety of power management and switching applications