Manufacturer Part Number
SI3493DDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance (Rds(on)) for low power loss
Fast switching speed for high-efficiency power conversion
High avalanche energy rating for robustness
Positive temperature coefficient of Rds(on) for easy paralleling
Product Advantages
Excellent power density and efficiency
Reliable and robust design
Ease of use in power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Power Dissipation (Max): 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Surface mount package (SOT-23-6 Thin, TSOT-23-6)
Tape & Reel (TR) packaging
Application Areas
High-efficiency power supplies
DC-DC converters
Motor drives
Switching regulators
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power density and efficiency
Reliable and robust design
Easy to use in power conversion applications
Wide operating temperature range (-55°C to 150°C)
Good gate charge and input capacitance characteristics for fast switching