Manufacturer Part Number
SI3493DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
A high-performance P-Channel MOSFET transistor with low on-resistance and high-speed switching capabilities.
Product Features and Performance
Trench technology for low on-resistance
Fast switching speed
20V drain-to-source voltage rating
3A continuous drain current
1W power dissipation
Product Advantages
Excellent efficiency and thermal performance
Compact surface mount package
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 27mΩ
Gate charge (Qg): 32nC
Operating temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
Compatible with a variety of power management and switching circuit designs
Application Areas
Power supplies
Motor drives
Lighting and display systems
Battery-powered devices
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available from Vishay
Key Reasons to Choose this Product
Exceptional efficiency and thermal performance
Compact size and surface mount packaging
Broad operating temperature range
Proven reliability and quality