Manufacturer Part Number
SI3483CDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
Trench MOSFET design
Operates from -55°C to 150°C
Drain-to-Source Voltage (Vdss) of 30V
Gate-to-Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 34mΩ @ 6.1A, 10V
Drain Current (Id) of 8A at 25°C
Input Capacitance (Ciss) of 1000pF @ 15V
Power Dissipation of 2W (Ta), 4.2W (Tc)
P-Channel FET type
Product Advantages
Low on-resistance for improved efficiency
Wide temperature range for versatile applications
High voltage and current handling capabilities
Compact SOT-23-6 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 34mΩ @ 6.1A, 10V
Drain Current (Id): 8A at 25°C
Input Capacitance (Ciss): 1000pF @ 15V
Power Dissipation: 2W (Ta), 4.2W (Tc)
FET Type: P-Channel
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for reliable performance
Compatibility
Compatible with SOT-23-6 surface mount applications
Application Areas
Power management circuits
Motor control
Switching applications
Portable electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose This Product
Low on-resistance for high efficiency
Wide temperature range for versatile use
High voltage and current handling
Compact surface mount package
Reliable Trench MOSFET technology
RoHS3 compliance for environmental consideration