Manufacturer Part Number
SI3430DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 100V
Low on-resistance (Rds(on)) of 170mΩ at 2.4A, 10V
Continuous Drain Current (Id) of 1.8A at 25°C
Maximum Power Dissipation of 1.14W at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for high-temperature applications
Compact surface-mount SOT-23-6 package
Key Technical Parameters
MOSFET Technology: N-Channel Enhancement-Mode
Gate-to-Source Voltage (Vgs) Range: ±20V
Gate Threshold Voltage (Vgs(th)): 2V @ 250μA (min)
Gate Charge (Qg): 6.6nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design for industrial applications
Compatibility
Compatible with various electronic circuits and devices that require a high-performance power MOSFET
Application Areas
Industrial control systems
Motor drives
Power supplies
Lighting and LED driver circuits
Product Lifecycle
Currently in active production
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Wide operating voltage and temperature range
Compact and reliable surface-mount package
RoHS compliance for environmentally-conscious designs
Proven track record and support from Vishay/Siliconix
Si3424CDV-T1-GE3 MOSElectro-Films (EFI) / Vishay