Manufacturer Part Number
SI3433BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
20V drain-source voltage
±8V gate-source voltage
42mΩ on-resistance
3A continuous drain current
1W power dissipation
-55°C to 150°C operating temperature range
18nC gate charge
Product Advantages
Low on-resistance
High current capability
Wide operating temperature range
Surface mount package
Key Technical Parameters
Drain-source voltage: 20V
Gate-source voltage: ±8V
On-resistance: 42mΩ
Continuous drain current: 4.3A
Power dissipation: 1.1W
Operating temperature: -55°C to 150°C
Gate charge: 18nC
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Compatible with a variety of electronic circuits and systems requiring a P-channel MOSFET
Application Areas
Suitable for use in power management, switching, and control applications
Product Lifecycle
Currently available product
No information on planned discontinuation or replacement
Key Reasons to Choose This Product
Low on-resistance for efficient power handling
High current capability for demanding applications
Wide operating temperature range for versatile use
Surface mount package for easy integration
RoHS compliance for environmentally-friendly design