Manufacturer Part Number
SI3430DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET
Optimized for power management and switching applications
Product Features and Performance
Wide drain-to-source voltage range up to 100V
Low on-resistance of 170mΩ at 2.4A, 10V
Fast switching speed
High current capability up to 1.8A
Low gate charge of 6.6nC at 10V
Product Advantages
Excellent power efficiency
Reliable performance in high-temperature environments
Compact SOT-23-6 package for space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 1.8A
Power Dissipation (Max): 1.14W
Gate Threshold Voltage (Vgs(th)): 2V
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Surface mount SOT-23-6 package
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power management circuits
Switching power supplies
Motor control
Industrial and automotive electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Reliable operation in demanding environments
Compact size for space-constrained designs
Proven compatibility with common power electronics components