Manufacturer Part Number
SI3424DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
30V Drain-to-Source Voltage
28mOhm Maximum On-Resistance at 6.7A, 10V
5A Continuous Drain Current at 25°C
800mV Maximum Gate Threshold Voltage at 250μA
18nC Maximum Gate Charge at 10V
Surface Mount Packaging (SOT-23-6 Thin, TSOT-23-6)
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Small surface mount package for compact designs
Meets RoHS3 compliance requirements
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 28mOhm @ 6.7A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Gate Threshold Voltage (Vgs(th)): 800mV @ 250μA
Gate Charge (Qg): 18nC @ 10V
Quality and Safety Features
RoHS3 compliant
Packaged in 6-TSOP format
Compatibility
This MOSFET transistor is compatible with a wide range of electronic circuit designs and power management applications.
Application Areas
Power switching
Power management
Motor control
Battery charging
LED driving
General electronic circuits
Product Lifecycle
This product is an active and currently available part from Vishay/Siliconix. There are no known plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
High current handling capability
Compact surface mount packaging
RoHS3 compliance for environmentally-friendly design
Proven reliability and performance from a trusted manufacturer
SI3433BDV-T1Electro-Films (EFI) / Vishay