Manufacturer Part Number
SI3429EDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
6-TSOP Manufacturer's Packaging
SOT-23-6 Thin, TSOT-23-6 Package / Case
6-TSOP Supplier Device Package
TrenchFET Series
Tape & Reel (TR) Package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
Power Dissipation (Max): 4.2W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliant
Wide Operating Temperature Range
Low On-Resistance
High Current Capability
Low Input Capacitance
High Power Dissipation
P-Channel FET Type
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Current Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range: -55°C ~ 150°C (TJ)
Compatibility
Compatible with a wide range of electronic devices and systems.
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial automation
Automotive electronics
Product Lifecycle
Currently available, no indication of discontinuation. Replacements and upgrades may be available.
Key Reasons to Choose This Product
RoHS3 Compliant
Wide Operating Temperature Range
Low On-Resistance
High Current Capability
Low Input Capacitance
High Power Dissipation
P-Channel FET Type
Suitable for a wide range of applications in power management, motor control, and industrial automation.