Manufacturer Part Number
SI3433CDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
TrenchFET Series
MOSFET (Metal Oxide) Technology
P-Channel FET Type
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Continuous Drain Current (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8V
Product Advantages
High current handling capability
Low on-resistance
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Continuous Drain Current (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Package: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Manufacturer's packaging: 6-TSOP
Mounting Type: Surface Mount
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
High current handling capability up to 6A
Low on-resistance of 38mOhm
Wide operating temperature range of -55°C to 150°C
Compact SOT-23-6 Thin or TSOT-23-6 package for space-constrained designs
Trench MOSFET technology for improved performance