SI3433CDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3433CDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

P-Channel Enhancement-Mode FET Transistor

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

Low on-resistance for high efficiency

Fast switching for high-frequency applications

High current capability up to 6A

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency

High frequency performance

Reliable operation in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs(max)): ±8V

On-resistance (Rds(on)): 38mΩ @ 5.2A, 4.5V

Continuous Drain Current (Id): 6A @ 25°C

Input Capacitance (Ciss): 1300pF @ 10V

Power Dissipation (Ptot): 3.3W @ Tc

Quality and Safety Features

RoHS3 compliant

Packaged in a 6-TSOP (TSOT-23-6) surface mount package

Compatibility

Suitable for a wide range of electronic applications, including power supplies, motor drives, and switch-mode power supplies

Application Areas

Ideal for high-frequency, high-efficiency power conversion and control applications

Product Lifecycle

This product is an active and readily available part from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent power efficiency and high-frequency performance

Reliable operation in harsh environments with wide temperature range

Efficient surface mount package for space-constrained designs

Readily available from a trusted manufacturer