Manufacturer Part Number
SI3424CDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Current Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
Power Dissipation (Max): 3.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Product Advantages
TrenchFET Technology
Compact SOT-23-6 Thin, TSOT-23-6 Package
Wide Operating Temperature Range: -55°C ~ 150°C (TJ)
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Tape & Reel (TR) Packaging
Application Areas
Suitable for various electronic applications requiring high-performance, efficient, and compact power management solutions
Product Lifecycle
Active device, no discontinuation planned
Key Reasons to Choose This Product
High performance TrenchFET technology for efficient power management
Compact and space-saving SOT-23-6 Thin, TSOT-23-6 package
Wide operating temperature range for versatile applications
RoHS3 compliant for environmentally friendly use
Widely compatible Tape & Reel (TR) packaging for easy integration