Manufacturer Part Number
SI3421DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-Channel MOSFET transistor from the TrenchFET series.
Product Features and Performance
Low on-resistance (Rds(on)) of 19.2 mOhm at 10 V gate drive
High current capability of 8 A at 25°C case temperature
Low gate charge (Qg) of 69 nC at 10 V gate drive
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable performance across a wide temperature range
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 8 A at 25°C case temperature
Input Capacitance (Ciss): 2580 pF at 15 V
Power Dissipation: 2 W at 25°C ambient, 4.2 W at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and systems that require a high-performance, low on-resistance P-Channel power switch.
Application Areas
Power management circuits
Motor control applications
Portable electronics
Industrial automation
Product Lifecycle
The SI3421 series is an active and widely used product. Replacement or upgrade options are available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable performance across a wide temperature range
Compact surface-mount package for space-constrained designs
RoHS3 compliance for use in environmentally-conscious applications
High current capability for demanding power management applications