Manufacturer Part Number
SI3410DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI3410DV-T1-GE3 is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
30V Drain-to-Source Voltage
±20V Gate-to-Source Voltage
5mOhm On-Resistance @ 5A, 10V
8A Continuous Drain Current @ 25°C
1295pF Input Capacitance @ 15V
2W Power Dissipation @ 25°C, 4.1W @ Case Temperature
33nC Gate Charge @ 10V
Product Advantages
Low On-Resistance for high efficiency
High current handling capability
Suitable for a wide range of applications
Key Technical Parameters
Vdss: 30V
Vgs(Max): ±20V
Rds(on) @ 5A, 10V: 19.5mOhm
Id @ 25°C: 8A
Ciss @ 15V: 1295pF
Pd @ 25°C: 2W, Pd @ Tc: 4.1W
Qg @ 10V: 33nC
Quality and Safety Features
ROHS3 Compliant
Suitable for Surface Mount applications
Compatibility
Fits in SOT-23-6 Thin, TSOT-23-6 packages
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Audio amplifiers
General purpose power switching
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current handling capability
Suitable for a wide range of power electronics applications
Compliant with RoHS requirements
Available in space-saving surface mount packages