SI3407DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3407DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel power MOSFET with low on-resistance and high current capability.

Product Features and Performance

Low on-resistance for efficient power conversion and management

High current capability up to 8A continuous drain current

Fast switching speed and low gate charge for high-frequency applications

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable and robust design for demanding applications

Versatile performance suitable for a wide range of power electronics

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±12V

On-Resistance (Rds(on)): 24mΩ @ 7.5A, 4.5V

Continuous Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 1670pF @ 10V

Power Dissipation (Pd): 4.2W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for demanding environmental conditions

Robust design for high reliability

Compatibility

Compatible with a wide range of power electronic circuits and systems

Application Areas

Power management

Motor control

Switch-mode power supplies

Telecommunications equipment

Industrial automation

Product Lifecycle

Current production model

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Excellent power efficiency and performance

Reliable and robust design for demanding applications

Versatile performance suitable for a wide range of power electronics

Wide operating temperature range for harsh environments

RoHS3 compliance for environmentally-friendly applications