SI3417DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3417DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance, low on-resistance P-channel TrenchFET power MOSFET in a small SOT-23-6 package.

Product Features and Performance

Low on-resistance of 25.2 mOhm @ 7.3 A, 10 V

Low gate charge of 50 nC @ 10 V

Fast switching speed

Wide operating temperature range of -55°C to 150°C

RoHS compliant

Product Advantages

Excellent power density and efficiency

Reliable and robust performance

Suitable for a variety of power management applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Maximum Gate-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id): 8 A @ 25°C

Input Capacitance (Ciss): 1350 pF @ 15 V

Power Dissipation: 2 W @ 25°C (Ta), 4.2 W @ 25°C (Tc)

Quality and Safety Features

RoHS3 compliant

Meets high quality and reliability standards

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Battery charging systems

Portable electronics

Industrial controls

Product Lifecycle

The SI3417DV-T1-GE3 is an active and readily available product from Vishay/Siliconix.

Replacements and upgrades are available if required.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and fast switching speed

Compact and reliable SOT-23-6 package

Wide operating temperature range and RoHS compliance

Suitable for a variety of power management applications

Readily available and supported by the manufacturer