SI3424BDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3424BDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Part of the TrenchFET Series

Product Features and Performance

Drain to Source Voltage (Vdss) of 30 V

Vgs (Max) of ±20 V

Rds On (Max) of 28 mOhm @ 7 A, 10 V

Continuous Drain Current (Id) of 8 A @ 25°C

Input Capacitance (Ciss) of 735 pF @ 15 V

Power Dissipation (Max) of 2.1 W (Ta), 2.98 W (Tc)

Gate Charge (Qg) of 19.6 nC @ 10 V

Product Advantages

Efficient power switching performance

Low on-resistance for improved energy efficiency

High current handling capability

Wide operating temperature range

Key Technical Parameters

MOSFET (Metal Oxide) Technology

N-Channel FET Type

Vgs(th) (Max) of 3 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On) of 4.5 V, 10 V

Operating Temperature Range of -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Meets safety and environmental regulations

Compatibility

Surface Mount Packaging (SOT-23-6 Thin, TSOT-23-6)

Tape & Reel (TR) Packaging

Application Areas

Power management circuits

Switch-mode power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently available product

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent power switching performance

Efficient energy consumption due to low on-resistance

Wide operating temperature range for diverse applications

Reliable and compliant with safety/environmental standards

Compatibility with common surface mount packaging