Manufacturer Part Number
STY80NM60N
Manufacturer
STMicroelectronics
Introduction
The STY80NM60N is a high-performance N-channel MOSFET transistor designed for power electronics applications.
Product Features and Performance
600V drain-to-source voltage rating
35mΩ typical on-resistance
74A continuous drain current at 25°C
10,100pF maximum input capacitance
447W maximum power dissipation at 25°C
Capable of operating at temperatures up to 150°C
Product Advantages
Excellent power handling capabilities
Low on-resistance for efficient power conversion
High voltage rating for a wide range of applications
Compact through-hole TO-247-3 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 35mΩ @ 37A, 10V
Continuous Drain Current (Id): 74A @ 25°C
Input Capacitance (Ciss): 10,100pF @ 50V
Power Dissipation (Tc): 447W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of power electronics applications, such as power supplies, motor drives, and inverters.
Application Areas
Power conversion and control
Industrial and automotive electronics
Renewable energy systems
Home appliances
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient operation
Wide voltage and temperature range
Compact and easy to integrate design
Proven reliability and quality