Manufacturer Part Number
STY60NM50
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor for power applications
Product Features and Performance
Drain-to-Source Voltage (Vdss): 500V
Continuous Drain Current (Id) @ 25°C: 60A
On-State Resistance (Rds(on)): 50mΩ @ 30A, 10V
Input Capacitance (Ciss): 7500pF @ 25V
Power Dissipation (Tc): 560W
Operating Temperature: 150°C (TJ)
Product Advantages
Excellent power handling capability
Low on-state resistance for high efficiency
Suitable for high-voltage, high-current applications
Key Technical Parameters
FET Type: N-Channel MOSFET
Threshold Voltage (Vgs(th)): 5V @ 250A
Gate Voltage (Vgs): ±30V
Gate Charge (Qg): 266nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable through-hole packaging (TO-247-3)
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Power factor correction circuits
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling capabilities for high-voltage, high-current applications
Low on-state resistance for high efficiency
Reliable and robust through-hole packaging
Suitable for a wide range of power electronic applications
Continued availability and potential future upgrades
