Manufacturer Part Number
STY60NM60
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 55mΩ
Continuous drain current of 60A at 25°C
High power dissipation of 560W
Fast switching capability
Product Advantages
Efficient power conversion
Reliable high-voltage operation
Low conduction losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 55mΩ
Drain Current (Id): 60A
Power Dissipation (Ptot): 560W
Input Capacitance (Ciss): 7300pF
Gate Charge (Qg): 266nC
Quality and Safety Features
RoHS3 compliant
High temperature operation up to 150°C
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is an active and available part from STMicroelectronics.
Key Reasons to Choose
Excellent performance-to-cost ratio
Proven reliability and quality
Suitable for high-voltage, high-power applications
Easy to integrate into power conversion designs
