Manufacturer Part Number
STY34NB50
Manufacturer
STMicroelectronics
Introduction
High-performance discrete power MOSFET transistor
Product Features and Performance
500V drain-to-source voltage
34A continuous drain current at 25°C
130mΩ maximum on-resistance
9100pF maximum input capacitance
450W maximum power dissipation
N-channel MOSFET
Product Advantages
Excellent power handling capability
Low on-resistance for high efficiency
High voltage and current ratings
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 130mΩ
Continuous Drain Current (Id): 34A
Quality and Safety Features
RoHS non-compliant
Through-hole mounting
Compatibility
Suitable for high-power switching applications
Application Areas
Power electronics
Motor control
Industrial equipment
Welding equipment
Product Lifecycle
Current product, no discontinuation or replacement planned
Key Reasons to Choose
High voltage and current ratings for demanding applications
Low on-resistance for high efficiency
Robust construction and reliable performance
