Manufacturer Part Number
STY105NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for use in high-voltage, high-current switching applications
Product Features and Performance
High drain-to-source voltage up to 500V
Low on-resistance of 22mΩ @ 52A, 10V
High continuous drain current of 110A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 326nC @ 10V
Fast switching characteristics
Product Advantages
Excellent performance in high-voltage, high-current switching applications
Efficient power conversion with low conduction losses
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 22mΩ @ 52A, 10V
Continuous Drain Current (Id): 110A @ 25°C
Input Capacitance (Ciss): 9600pF @ 100V
Power Dissipation: 625W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various high-voltage, high-current switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently available
No near-term discontinuation expected
Replacement or upgrade options may become available in the future
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current switching applications
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable operation
Fast switching characteristics for improved system efficiency
Compatibility with various high-voltage, high-current applications
