Manufacturer Part Number
STY30NK90Z
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
Offers high avalanche energy capability
Provides fast switching and low on-resistance
Suitable for high-voltage, high-power switching applications
Product Advantages
Robust design for high reliability
Improved thermal performance
Efficient power management
Key Technical Parameters
Drain to Source Voltage (Vdss): 900 V
Gate-Source Voltage (Vgs) (Max): ±30 V
On-Resistance (Rds(on)) (Max): 260 mΩ @ 14 A, 10 V
Continuous Drain Current (Id) @ 25°C: 26 A (Tc)
Input Capacitance (Ciss) (Max): 12,000 pF @ 25 V
Power Dissipation (Max): 450 W (Tc)
Gate Charge (Qg) (Max): 490 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-65°C to 150°C)
Compatibility
Through-hole mounting (TO-247-3 package)
Application Areas
High-voltage, high-power switching applications
Industrial and power conversion equipment
Welding machines, motor drives, and power supplies
Product Lifecycle
Current product, no discontinuation or end-of-life plans
Key Reasons to Choose This Product
Robust and reliable design for high-voltage, high-power applications
Efficient power management with low on-resistance and fast switching
Suitable for a wide range of industrial and power conversion applications
Proven performance and quality from a trusted manufacturer (STMicroelectronics)
