Manufacturer Part Number
STY60NK30Z
Manufacturer
STMicroelectronics
Introduction
High-performance discrete MOSFET transistor for power switching applications
Product Features and Performance
N-channel MOSFET with 300V drain-source voltage rating
Low on-resistance of 45mΩ @ 30A, 10V
High continuous drain current of 60A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 220nC @ 10V
Robust TO-247-3 package
Product Advantages
Efficient power conversion
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 45mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 7200pF @ 25V
Power Dissipation (Tc): 450W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package for high reliability
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial automation equipment
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available if needed
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable operation in harsh environments
Ease of integration into power conversion systems
Widespread compatibility and availability
