Manufacturer Part Number
STY145N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current N-channel power MOSFET transistor
Part of the MDmesh V series
Product Features and Performance
Designed for high-power, high-efficiency applications
Rated for 650V drain-source voltage
Continuous drain current of 138A at 25°C
Low on-resistance of 15mΩ
High power dissipation of 625W
Fast switching capabilities
Product Advantages
Excellent trade-off between low on-resistance and fast switching
Robust design for high-reliability applications
Optimized for high-efficiency power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 15mΩ @ 69A, 10V
Continuous Drain Current (Id): 138A @ 25°C
Input Capacitance (Ciss): 18500pF @ 100V
Power Dissipation (Tc): 625W
Quality and Safety Features
RoHS3 compliant
Designed for high-temperature operation up to 150°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
High-power, high-efficiency power conversion applications
Inverters, motor drives, switching power supplies
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available within the MDmesh V series
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design for demanding applications
High efficiency and power density capabilities
Compatibility with common power electronics systems
