Manufacturer Part Number
STD10NF10T4
Manufacturer
STMicroelectronics
Introduction
This product is a single N-channel MOSFET transistor from the STripFET II series.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
130mΩ Max On-State Resistance (Rds(on)) at 5A, 10V
13A Continuous Drain Current (Id) at 25°C
460pF Max Input Capacitance (Ciss) at 25V
50W Power Dissipation (Tc)
-55°C to 175°C Operating Temperature Range
Product Advantages
Efficient power switching performance
Robust design for high reliability
Optimized for low power applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
4V Max Gate Threshold Voltage (Vgs(th)) at 250μA
10V Drive Voltage Range
21nC Max Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
DPAK surface mount package
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power management applications.
Application Areas
Switch mode power supplies
Motor drives
Battery chargers
General purpose power switching
Product Lifecycle
This product is an active and widely available part from STMicroelectronics. Replacements and upgrades may be available as technology evolves.
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power performance
Robust design for reliable operation in demanding applications
Optimized for low power consumption and thermal management
Broad compatibility and suitability for various power electronics uses
STD10N60M2 MOSSTMicroelectronics