Manufacturer Part Number
STD10NM65N
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel MOSFET in DPAK package
Product Features and Performance
650V drain-source voltage
9A continuous drain current
480mΩ on-resistance
Low input capacitance of 850pF
90W power dissipation
Wide operating temperature range up to 150°C
Product Advantages
Excellent power density and efficiency
Robust and reliable performance
Suitable for high-voltage and high-power applications
Key Technical Parameters
Drain-source voltage: 650V
Gate-source voltage: ±25V
On-resistance: 480mΩ @ 4.5A, 10V
Continuous drain current: 9A
Input capacitance: 850pF @ 50V
Power dissipation: 90W
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount assembly
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Induction heating
Lighting ballasts
Welding equipment
Product Lifecycle
This product is an active and widely used device
Replacement or upgrade options are available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power density and efficiency
Robust and reliable performance
Wide operating temperature range
Suitable for high-voltage and high-power applications
RoHS3 compliant and DPAK package for reliable assembly
STD10PF06T4 MOSSTMicroelectronics