Manufacturer Part Number
STD10P6F6
Manufacturer
STMicroelectronics
Introduction
High-performance P-channel power MOSFET with DeepGATE and STripFET VI technologies
Product Features and Performance
60V drain-source voltage
Low on-resistance of 160mΩ @ 5A, 10V
10A continuous drain current at 25°C
35W power dissipation
340pF input capacitance
Suitable for high-frequency switching applications
Product Advantages
Excellent energy efficiency due to low on-resistance
High power density and thermal performance
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 160mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Power Dissipation (Ptot): 35W @ Tc
Input Capacitance (Ciss): 340pF @ 48V
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient heat dissipation
Compatibility
Suitable for a wide range of power supply, motor control, and switching applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent energy efficiency and power density
Reliable and robust design for harsh environments
Ease of use with standard DPAK package
Broad application versatility