Manufacturer Part Number
STD10NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low RDS(on) in DPAK package.
Product Features and Performance
Low on-resistance for high efficiency
Optimized for hard-switching and soft-switching applications
Withstands high voltage up to 600V
Low gate charge for fast switching
Product Advantages
Compact and efficient power conversion
Reliable and robust design
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 550mΩ @ 4A, 10V
Continuous Drain Current (ID): 10A @ 25°C
Input Capacitance (Ciss): 540pF @ 50V
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Readily available with potential for future upgrades or enhancements
Key Reasons to Choose
Excellent efficiency and power density
Reliable and robust design
Versatile for a wide range of applications
Backed by the quality and expertise of STMicroelectronics
STD10NM65N MOSSTMicroelectronics