Manufacturer Part Number
STD10P10F6
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
100V Drain-Source Voltage
10A Continuous Drain Current
180mΩ On-Resistance
864pF Input Capacitance
5nC Gate Charge
40W Power Dissipation
Operating Temperature up to 175°C
Product Advantages
Efficient power management
Reliable high-voltage operation
Compact surface-mount package
Key Technical Parameters
Vds: 100V
Vgs (Max): ±20V
Rds (On) @ 5A, 10V: 180mΩ
Id (Continuous) @ 25°C: 10A
Ciss @ 80V: 864pF
Qg @ 10V: 16.5nC
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient heat dissipation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
Active product
No discontinuation or upgrade information available
Key Reasons to Choose
Excellent power handling capability
Low on-resistance for improved efficiency
Wide voltage and temperature operating range
Compact surface-mount package for space-constrained designs