STD10NM60ND - STMicroelectronics

Manufacturer Part Number

STD10NM60ND

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET with low on-resistance and fast switching capabilities

Product Features and Performance

600V, 8A N-channel power MOSFET

Very low on-resistance (RDS(on) = 600 mΩ @ 4A, 10V)

Fast switching speed

Low gate charge (Qg = 20 nC @ 10V)

Wide operating temperature range (-55°C to 150°C)

Superior power dissipation (70W @ Tc)

Product Advantages

Excellent performance-to-cost ratio

Suitable for high-frequency, high-efficiency power conversion applications

Robust and reliable design

Key Technical Parameters

Drain-Source Voltage (VDS): 600V

Gate-Source Voltage (VGS): ±25V

Continuous Drain Current (ID): 8A @ 25°C

On-Resistance (RDS(on)): 600 mΩ @ 4A, 10V

Input Capacitance (Ciss): 577 pF @ 50V

Power Dissipation (PD): 70W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free soldering

Robust DPAK package for high reliability

Compatibility

Surface mount DPAK package

Compatible with standard PCB assembly processes

Application Areas

Switching power supplies

Motor drives

Lighting ballasts

Industrial controls

Telecom and data center power systems

Product Lifecycle

Current production, no plans for discontinuation

Replacements and upgrades available from the manufacturer

Key Reasons to Choose

Excellent performance-to-cost ratio

Reliable and robust design

Suitable for high-frequency, high-efficiency power conversion applications

Wide operating temperature range

Easy to integrate into existing designs