STD10N60DM2 - STMicroelectronics

Manufacturer Part Number

STD10N60DM2

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET with MDmesh DM2 technology

Product Features and Performance

650V drain-source voltage

8A continuous drain current at 25°C

530mΩ maximum on-resistance

15nC maximum gate charge at 10V

Optimized for high-efficiency power conversion applications

Product Advantages

Low on-resistance for high efficiency

Robust design for high reliability

Suitable for a wide range of power conversion applications

Key Technical Parameters

Drain-source voltage (Vdss): 650V

Gate-source voltage (Vgs): ±25V

Continuous drain current (Id) at 25°C: 8A

On-resistance (Rds(on)) at 4A, 10V: 530mΩ

Input capacitance (Ciss) at 100V: 529pF

Power dissipation (Tc) at 25°C: 109W

Gate threshold voltage (Vgs(th)) at 250A: 5V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Designed for high reliability and long lifespan

Compatibility

TO-252-3 (DPAK) surface mount package

Compatible with a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Lighting ballasts

Inverters

Solar power systems

Product Lifecycle

Currently in active production

No plans for discontinuation announced

Replacement or upgrade options available as technology advances

Key Reasons to Choose This Product

High efficiency and low power losses due to low on-resistance

Robust and reliable design for demanding applications

Versatile and compatible with a wide range of power electronics systems

Optimized for high-efficiency power conversion applications