Manufacturer Part Number
STD10LN80K5
Manufacturer
STMicroelectronics
Introduction
High performance N-Channel Power MOSFET with low on-resistance and high voltage rating.
Product Features and Performance
800V drain-to-source voltage rating
Low on-resistance of 630mΩ @ 4A, 10V
Continuous drain current of 8A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 427pF @ 100V
High power dissipation capability of 110W
Product Advantages
Excellent power handling and efficiency
Robust design for high voltage applications
Compact D-PAK (TO-252) surface mount package
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-resistance (Rds(on)): 630mΩ @ 4A, 10V
Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 427pF @ 100V
Power Dissipation (Ptot): 110W
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature and high voltage environments
Compatibility
Can be used in a variety of power conversion and control applications, including switched-mode power supplies, motor drives, and industrial electronics.
Application Areas
Power conversion and control
Switched-mode power supplies
Motor drives
Industrial electronics
Product Lifecycle
This product is currently in production and readily available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and efficiency for high voltage applications
Robust design with wide operating temperature range and high power dissipation
Compact surface mount package for easy integration
Reliable performance and quality backed by STMicroelectronics
STD10NF06LT4STMicroelectronics