Manufacturer Part Number
STD10N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET based on the MDmesh II Plus technology.
Product Features and Performance
600V drain-to-source voltage
Low on-resistance (600mΩ typical)
High current capability (7.5A continuous at 25°C)
Low gate charge (13.5nC typical)
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Excellent energy efficiency due to low conduction and switching losses
Robust design with high ruggedness and reliability
Optimized for high-frequency, high-efficiency power conversion
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 600mΩ @ 3A, 10V
Continuous drain current (Id): 7.5A at 25°C
Input capacitance (Ciss): 400pF @ 100V
Power dissipation (Pd): 85W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-frequency, high-efficiency power conversion
Robust design with high ruggedness and reliability
Compatibility
Surface mount DPAK (TO-252-3) package
Suitable for a wide range of power conversion applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Lighting applications
Telecommunications equipment
Industrial automation and control
Product Lifecycle
This product is in active production and not nearing discontinuation.
Replacements and upgrades are available from the manufacturer.
Several Key Reasons to Choose This Product
Excellent energy efficiency due to low conduction and switching losses
Robust design with high ruggedness and reliability
Optimized for high-frequency, high-efficiency power conversion
Wide operating temperature range (-55°C to 150°C)
High current capability (7.5A continuous at 25°C)
Low gate charge (13.5nC typical) for fast switching
STD1048T4MOTOROLA