Manufacturer Part Number
STB13N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel MOSFET transistor
Product Features and Performance
High breakdown voltage of 800V
Low on-resistance of 450mΩ
High current capability up to 12A
Wide operating temperature range of -55°C to 150°C
High input capacitance of 870pF
Power dissipation up to 190W
Product Advantages
Excellent high voltage and high power handling capabilities
Efficient power conversion and control
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 450mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 870pF @ 100V
Power Dissipation (Ptot): 190W @ Tc
Quality and Safety Features
ROHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (TO-263, DPAK)
Compatible with various power electronics and control circuits
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent high voltage and high power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable performance and RoHS3 compliance for high-quality products