STB13007DT4 - STMicroelectronics

Manufacturer Part Number

STB13007DT4

Manufacturer

STMicroelectronics

Introduction

High-power NPN bipolar junction transistor (BJT)

Suitable for high-voltage, high-current switching and amplifier applications

Product Features and Performance

Capable of handling up to 80W of power

Breakdown voltage of up to 400V between collector and emitter

Maximum collector current of 8A

Minimum DC current gain (hFE) of 8 at 5A and 5V

Product Advantages

Robust design for high-stress applications

Compact DPAK surface mount package

RoHS3 compliant for environmental compliance

Key Technical Parameters

Operating temperature up to 150°C

Collector-emitter saturation voltage of 3V at 1A, 5A

Collector cutoff current up to 100A

Quality and Safety Features

Compliant with RoHS3 directives for hazardous substance restrictions

Reliable and durable DPAK package design

Compatibility

Suitable for high-voltage, high-current switching and amplifier applications

Can be used in a variety of power electronics and industrial control systems

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial control systems

Product Lifecycle

Currently in production

No plans for discontinuation at this time

Replacement or upgrade options may be available in the future

Key Reasons to Choose

High power handling capability up to 80W

Robust design for high-stress applications

Compact surface mount DPAK package

RoHS3 compliance for environmental regulations

Suitable for a wide range of high-power electronic applications