Manufacturer Part Number
STB12NM50ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a DPAK (TO-263) package for high-power applications
Product Features and Performance
High voltage rating of 500V
Low on-resistance of 380mΩ
High continuous drain current of 11A
Low input capacitance of 850pF
High power dissipation of 100W
Suitable for high-power, high-efficiency switching applications
Product Advantages
Excellent power handling capability
High efficiency due to low on-resistance
Compact DPAK (TO-263) package
Reliable performance and long lifespan
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380mΩ
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 850pF
Power Dissipation (Pd): 100W
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for improved heat dissipation
Reliable performance and long lifespan
Compatibility
Suitable for various high-power, high-efficiency switching applications
Application Areas
Switched-mode power supplies
Motor drives
Industrial and consumer electronics
Lighting applications
Renewable energy systems
Product Lifecycle
This product is an active and widely available component. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Several Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Compact and thermally efficient DPAK (TO-263) package
Reliable performance and long lifespan
Widely compatible with various high-power, high-efficiency applications
Actively available with replacement and upgrade options