Manufacturer Part Number
STB12NM50T4
Manufacturer
STMicroelectronics
Introduction
High-voltage MOSFET transistor for power electronics applications
Product Features and Performance
N-channel MOSFET device
High breakdown voltage of 550V
Low on-resistance of 350mΩ
Continuous drain current of 12A at 25°C
Wide operating temperature range of -65°C to 150°C
Fast switching and low gate charge of 39nC
Suitable for high-frequency and high-efficiency power conversion circuits
Product Advantages
Excellent power handling capability
High efficiency and low power losses
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 550V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 350mΩ
Drain Current (Id): 12A
Input Capacitance (Ciss): 1000pF
Power Dissipation (Ptot): 160W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Surface mount package (D2PAK)
Suitable for various power electronics applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Industrial and automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
High power handling and efficiency
Reliable and robust design
Wide operating temperature range
Suitable for high-frequency and high-power applications
Easy to integrate into power electronics systems