STB12NK80ZT4 - STMicroelectronics

Manufacturer Part Number

STB12NK80ZT4

Manufacturer

STMicroelectronics

Introduction

High-voltage, N-channel MOSFET with low on-resistance and high-speed switching capabilities.

Product Features and Performance

800V drain-to-source voltage (Vdss)

750mΩ maximum on-resistance (Rds(on)) at 5.25A, 10V

5A continuous drain current (Id) at 25°C

2620pF maximum input capacitance (Ciss) at 25V

190W maximum power dissipation at Tc

Product Advantages

Excellent switching performance

High voltage and high current handling capability

Low on-resistance for high efficiency

Wide operating temperature range (-55°C to 150°C)

Key Technical Parameters

N-channel MOSFET

800V drain-to-source voltage (Vdss)

±30V maximum gate-to-source voltage (Vgs)

5V maximum gate threshold voltage (Vgs(th)) at 100A

87nC maximum gate charge (Qg) at 10V

Quality and Safety Features

RoHS3 compliant

D2PAK package for high power and thermal management

Compatibility

Surface mount package (TO-263-3, D2PAK)

Suitable for various power conversion and control applications

Application Areas

Power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current product

No plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for high efficiency

Excellent switching performance for fast and reliable power conversion

Wide operating temperature range for versatile applications

RoHS3 compliance for environmentally-friendly use